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D. Lulewicz, J. Galy, Densification of SiC by SPS-effects of time, temperature and pressure, J. Eur. Ceram. Soc. 27 (2007) 2725-2728. [2] S. Baud, F. Thevenot, Microstructures and mechanical properties of liquid-phase sintered seeded silicon carbide, Mater. Chem. Phys. 67 (2001) 165-174. [3]S. 239-252. [4] M. Ohyanagi, T. Yamamoto, H. Kitaura, Y. Kodera, T. A. Munir, Consolidation of nanostructured SiC with disorder–order transformation, Scripta Mater. 50 (2004) 111-114. J. J. C. DeJonghe, C. J.

The surface morphology of β-SiC film changed from six-fold facet to five-fold pyramid with increasing Tdep. 51272196 and the 111 Project (B13035). , LTD. Key Engineering Materials Vol. Y. Z. L. Liu, B. G. F. J. J. Wang, Fabrication of highly dense pure SiC ceramics via the HTPVT method, Acta Mater. 59 (2011) 6257-6263. [2] X. Zhao, X. He, Y. Sun, J. Yi, P. Xiao, Superhard and tougher SiC/Diamond-like-carbon composite films produced by electron beam physical vapor deposition, Acta Mater. 57 (2009) 893-902.

Soc. 9 (1992) 357-363. [10] F. Liao, S. M. L. Girshick, High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma, Mater. Lett. 57 (2003) 1982-1986. S. S. Choi, The reactant depletion effect on chemically vapor deposited SiC films with pressure and gas ambient, Thin Solid Films. 312 (1998) 195-201. F. S. Tsai, Low pressure chemical vapor deposition of silicon carbide from dichorosilane and acetylene, Mater. Chem. Phys. 63 (2000) 196-201. [13] M.

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