By Liu, H.; Dandy, D.S.
This e-book provides an up-to-date, systematic evaluation of the most recent advancements in diamond CVD strategies, with emphasis at the nucleation and early progress levels of diamond CVD. the target is to familiarize the reader with the clinical and engineering features of diamond CVD, and to supply skilled researchers, scientists, and engineers in teachers and with the most recent advancements during this starting to be box.
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Additional resources for Diamond Chemical Vapor Deposition
In addition, the interactions ofgas-phase species with the substrate surface in diamond CVD may lead to surface carbon atoms of different chemical bonding states and structures, for example, sp’, sp2, or sp3 bonded carbon, amorphous carbon, diamond-like carbon or carbon in carbides.
Seeding[‘661[‘801 Table 5. Physical Properties of Currently Used or Potential Substrate Materials for Diamond Epitaxy Substrate lllalerlill diamond Melting 3797 (hexagonal) a-axis c-axis con\tantb Dearity’ (k. 80 (lO~O)[l951 0 17 (OWl)[lY6[ ---. X3 [I971 the phases exist. at 20 ‘C. calculated 81 800 “C for most metals; phases ex,sr,nX above 800 ‘C. O-100 ‘C Car melals. 500 energy a, melung physisorplionlchelnlsorptlon. [52b]: nt Ihc lower limit of tcmpcr;~rc range for ~bc ‘C for ccwm~cs. lompcralure.
The activation of the gas phase is achieved through the collision of high energy electrons with the neutral gas molecules, leading to the dissociation of the gas species and the generation of reactive precursors for diamond growth. In all DC PACVD methods, substrates are mounted on the anode of the deposition system. 1711 28 Diamond Chemical Vapor Deposition In DC glow discharge PACVD systems, larger substrate plates may be used, with coated areas reaching 70 cm2 (Table 1). The gas pressures in these systems are usually on the order of 40 torr.