By Michael A. Kinch
The alternative of accessible infrared (IR) detectors for insertion into sleek IR platforms is either huge and complicated. the aim of this article is to supply a technical database from which rational IR detector choice standards evolve, and hence make clear the choices open to the fashionable IR approach clothier. Emphasis concentrates normally on high-performance IR platforms working in a tactical surroundings, even supposing there is also dialogue of either strategic environments and occasional- to medium-performance process necessities.
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Extra resources for Fundamentals of Infrared Detector Materials
For this case, the S-R lifetimes are controlled by a combination of the above mechanisms. For −1 these modes of operation, the electron lifetime τn = (τno + τpo n1 /p)−1 . 225 HgCdTe (a) vs. 5 × 1015 cm−3 Cu and (b) vs. Cu doping concentration at 77 K, for τno = 5 s. 3 HgCdTe (a) vs. 103 /T for 1015 cm−3 Cu and (b) vs. Cu doping concentration at 77 K, for no = 20 s. carrier concentration, p, to be determined by the extrinsic dopant. This behavior is in qualitative agreement with data found in the literature [31–33].
7 State-of-the-art measured minority carrier lifetime values for n- and p-type MWIR and LWIR HgCdTe at 77 K. 5 Pb1–x SnxTe Before leaving the realm of ternary alloys, it is worth revisiting the materials technology that lost out in the Common Module race in the early 1970s, namely PbSnTe. From a purely physics point of view the direct bandgap alloy PbSnTe is a fascinating materials system. • • • • • • • There is evidence of para-electric behavior , in which the static dielectric constant obeys a Curie law above a ferroelectric transition temperature which is less than absolute zero.
C) General p-type doping Invariably, p-HgCdTe contains both vacancies and extrinsic dopants. For this case, the S-R lifetimes are controlled by a combination of the above mechanisms. For −1 these modes of operation, the electron lifetime τn = (τno + τpo n1 /p)−1 . 225 HgCdTe (a) vs. 5 × 1015 cm−3 Cu and (b) vs. Cu doping concentration at 77 K, for τno = 5 s. 3 HgCdTe (a) vs. 103 /T for 1015 cm−3 Cu and (b) vs. Cu doping concentration at 77 K, for no = 20 s. carrier concentration, p, to be determined by the extrinsic dopant.