Download Fundamentals of Infrared Detector Materials by Michael A. Kinch PDF

By Michael A. Kinch

The alternative of accessible infrared (IR) detectors for insertion into sleek IR platforms is either huge and complicated. the aim of this article is to supply a technical database from which rational IR detector choice standards evolve, and hence make clear the choices open to the fashionable IR approach clothier. Emphasis concentrates normally on high-performance IR platforms working in a tactical surroundings, even supposing there is also dialogue of either strategic environments and occasional- to medium-performance process necessities.

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For this case, the S-R lifetimes are controlled by a combination of the above mechanisms. For −1 these modes of operation, the electron lifetime τn = (τno + τpo n1 /p)−1 . 225 HgCdTe (a) vs. 5 × 1015 cm−3 Cu and (b) vs. Cu doping concentration at 77 K, for τno = 5 s. 3 HgCdTe (a) vs. 103 /T for 1015 cm−3 Cu and (b) vs. Cu doping concentration at 77 K, for no = 20 s. carrier concentration, p, to be determined by the extrinsic dopant. This behavior is in qualitative agreement with data found in the literature [31–33].

7 State-of-the-art measured minority carrier lifetime values for n- and p-type MWIR and LWIR HgCdTe at 77 K. 5 Pb1–x SnxTe Before leaving the realm of ternary alloys, it is worth revisiting the materials technology that lost out in the Common Module race in the early 1970s, namely PbSnTe. From a purely physics point of view the direct bandgap alloy PbSnTe is a fascinating materials system. • • • • • • • There is evidence of para-electric behavior [34], in which the static dielectric constant obeys a Curie law above a ferroelectric transition temperature which is less than absolute zero.

C) General p-type doping Invariably, p-HgCdTe contains both vacancies and extrinsic dopants. For this case, the S-R lifetimes are controlled by a combination of the above mechanisms. For −1 these modes of operation, the electron lifetime τn = (τno + τpo n1 /p)−1 . 225 HgCdTe (a) vs. 5 × 1015 cm−3 Cu and (b) vs. Cu doping concentration at 77 K, for τno = 5 s. 3 HgCdTe (a) vs. 103 /T for 1015 cm−3 Cu and (b) vs. Cu doping concentration at 77 K, for no = 20 s. carrier concentration, p, to be determined by the extrinsic dopant.

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